Publication Information

Title: Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

Type: Journal

Info: Journal of Vacuum Science & Technology A 35, 031510 (2017)

Date: 2017-04-12

DOI: http://dx.doi.org/10.1116/1.4982224

Author Information

Name

Institution

Yonsei University

Yonsei University

Yonsei University

Yonsei University

Yonsei University

Yonsei University

Yonsei University

Yeungnam University

Samsung Display Co.

Samsung Display Co.

Films

Deposition Temperature Range N/A

33271-88-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Ellipso Technology Elli-SE

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

NEC Pelletron 6SDH-2

Conformality, Step Coverage

TEM, Transmission Electron Microscope

FEI Technai F20

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Current Density

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Transistor Characteristics

Transistor Characterization

Agilent 4155C Semiconductor Parameter Analyzer

Substrates

Silicon

Keywords

Notes

1038



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