Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 031510 (2017)
Date:
2017-04-12

Author Information

Name Institution
Hanearl JungYonsei University
Il-Kwon OhYonsei University
Seungmin YeoYonsei University
Hyungjun KimYonsei University
Su Jeong LeeYonsei University
Yun Cheol KimYonsei University
Jae Min MyoungYonsei University
Soo-Hyun KimYeungnam University
Jun Hyung LimSamsung Display Co.
Sunhee LeeSamsung Display Co.

Films

Plasma ZrO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Silicon

Keywords

Notes

1038