Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 031510 (2017)
Date:
2017-04-12
Author Information
| Name | Institution |
|---|---|
| Hanearl Jung | Yonsei University |
| Il-Kwon Oh | Yonsei University |
| Seungmin Yeo | Yonsei University |
| Hyungjun Kim | Yonsei University |
| Su Jeong Lee | Yonsei University |
| Yun Cheol Kim | Yonsei University |
| Jae Min Myoung | Yonsei University |
| Soo-Hyun Kim | Yeungnam University |
| Jun Hyung Lim | Samsung Display Co. |
| Sunhee Lee | Samsung Display Co. |
Films
Plasma ZrO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
Notes
| 1038 |