Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
Type:
Journal
Info:
J. Phys. D: Appl. Phys. 54 035102
Date:
2020-09-29
Author Information
| Name | Institution |
|---|---|
| Ruben Alcala | NaMLab gGmbH |
| Claudia Richter | NaMLab gGmbH |
| Monica Materano | NaMLab gGmbH |
| Patrick D. Lomenzo | NaMLab gGmbH |
| Chuanzhen Zhou | North Carolina State University |
| Jacob L. Jones | North Carolina State University |
| Thomas Mikolajick | NaMLab gGmbH |
| Uwe Schroeder | NaMLab gGmbH |
Films
Plasma HfZrO2
Thermal HfZrO2
Plasma HfO2
Thermal HfO2
Plasma ZrO2
Thermal ZrO2
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Remanent Polarization
Analysis: Ferroelectrical Testing
Characteristic: Breakdown Voltage Lifetime
Analysis: Ferroelectrical Testing
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1565 |