Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films

Type:
Journal
Info:
J. Phys. D: Appl. Phys. 54 035102
Date:
2020-09-29

Author Information

Name Institution
Ruben AlcalaNaMLab gGmbH
Claudia RichterNaMLab gGmbH
Monica MateranoNaMLab gGmbH
Patrick D. LomenzoNaMLab gGmbH
Chuanzhen ZhouNorth Carolina State University
Jacob L. JonesNorth Carolina State University
Thomas MikolajickNaMLab gGmbH
Uwe SchroederNaMLab gGmbH

Films



Plasma HfO2


Thermal HfO2


Plasma ZrO2


Thermal ZrO2


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Remanent Polarization
Analysis: Ferroelectrical Testing

Characteristic: Breakdown Voltage Lifetime
Analysis: Ferroelectrical Testing

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Ferroelectrics
Plasma vs Thermal Comparison

Notes

1565