About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films

Type:
Journal
Info:
J. Phys. D: Appl. Phys. 54 035102
Date:
2020-09-29
DOI:
http://dx.doi.org/10.1088/1361-6463/abbc98

Author Information

Name Institution
Ruben AlcalaNaMLab gGmbH
Claudia RichterNaMLab gGmbH
Monica MateranoNaMLab gGmbH
Patrick D. LomenzoNaMLab gGmbH
Chuanzhen ZhouNorth Carolina State University
Jacob L. JonesNorth Carolina State University
Thomas MikolajickNaMLab gGmbH
Uwe SchroederNaMLab gGmbH

Films

Plasma HfZrO2

Hardware used: Oxford Instruments OpAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
Tris(dimethylamino)cyclopentadienyl Zirconium, CpZr(NMe2)3, Air Liquide ZyALDTM
CAS#: 33271-88-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 250-350C

Thermal HfZrO2

Hardware used: Oxford Instruments OpAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
Tris(dimethylamino)cyclopentadienyl Zirconium, CpZr(NMe2)3, Air Liquide ZyALDTM
CAS#: 33271-88-4
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 250-350C

Plasma HfO2

Hardware used: Oxford Instruments OpAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Thermal HfO2

Hardware used: Oxford Instruments OpAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Plasma ZrO2

Hardware used: Oxford Instruments OpAL
Tris(dimethylamino)cyclopentadienyl Zirconium, CpZr(NMe2)3, Air Liquide ZyALDTM
CAS#: 33271-88-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Thermal ZrO2

Hardware used: Oxford Instruments OpAL
Tris(dimethylamino)cyclopentadienyl Zirconium, CpZr(NMe2)3, Air Liquide ZyALDTM
CAS#: 33271-88-4
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: ION TOF TofSIMS 5

Characteristic: Remanent Polarization
Analysis: Ferroelectrical Testing
Diagnostic: aixACCT TF Analyzer 3000

Characteristic: Breakdown Voltage Lifetime
Analysis: Ferroelectrical Testing
Diagnostic: aixACCT TF Analyzer 3000

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: aixACCT TF Analyzer 3000

Substrates

Si(100)

Notes

1565