Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM, CAS# 941596-80-1

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALS🇩🇪Tris(dimethylamido)cyclopentadienylhafnium

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 13 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
2Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
3Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
4Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
5Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
6Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
7Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
8Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
9Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
10Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
11Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
12Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
13Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies