Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM, CAS# 941596-80-1

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 13 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
2Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
3Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
4Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
5Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
6Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
7Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
8Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
9Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
10Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
11Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
12Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
13Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition