Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM, CAS# 941596-80-1

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
2Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
3Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
4Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
5Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
6Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
7Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
8Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
9Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
10Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
11Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
12Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
13Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2