Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM, CAS# 941596-80-1

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
2Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
3Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
4Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
5Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
6Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
7Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
8Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
9Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
10Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
11Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
12Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
13Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies