tris(dimethylamido)cyclopentadienyl hafnium, HfCp(NMe2)3 , Air Liquide HyALDTM, CAS# 0-0-0

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
2Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
3Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
4Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
5Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
6Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
7Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
8Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
9Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
10Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
11Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films