Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM, CAS# 941596-80-1

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 13 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
2Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
3Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
4Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
5Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
6Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
7Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
8Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
9Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
10Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
11Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
12Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
13Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions