Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM, CAS# 941596-80-1

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
2Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
3Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
4Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
5Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
6Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
7Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
8Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
9Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
10Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
11Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
12Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
13Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films