Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension

Type:
Journal
Info:
NEVAC blad 57 | 1 april 2019
Date:
2019-04-01
DOI:
https://research.tue.nl/en/publications/ion-energy-control-during-plasma-enhanced-atomic-layer-deposition

Author Information

Name Institution
Tahsin FarazEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3
CAS#: 0-0-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Stress
Analysis: -
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Silicon

Notes

1640