Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension

Type:
Journal
Info:
NEVAC blad 57 | 1 april 2019
Date:
2019-04-01

Author Information

Name Institution
Tahsin FarazEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films



Plasma SiNx


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Stress
Analysis: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Substrates

Silicon

Notes

1640