Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3, CAS# 0-0-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 6 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
2Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
3Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
4Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
5Designing high performance precursors for atomic layer deposition of silicon oxide
6Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx