Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3, CAS# 0-0-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 6 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
2Designing high performance precursors for atomic layer deposition of silicon oxide
3Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
4Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
5Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
6Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx