di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3, CAS# 0-0-0

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Designing high performance precursors for atomic layer deposition of silicon oxide
2Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
3Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
4Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
5Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
6Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties