Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2017, 9 (2), pp 1858-1869
Date:
2016-12-06
DOI:
http://dx.doi.org/10.1021/acsami.6b12267

Author Information

Name Institution
Tahsin FarazEindhoven University of Technology
Maarten van DrunenEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Anupama MallikarjunanAir Products
Iain BuchananAir Products
Dennis M. HausmannLam Research Corporation
Jon HenriLam Research Corporation
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3
CAS#: 0-0-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 100-360C

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 100-360C

Film/Plasma Properties

Characteristic: Density
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Diagnostic: Custom

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Substrates

SiO2

Notes

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