Publication Information

Title:
Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2017, 9 (2), pp 1858-1869
Date:
2016-12-06

Author Information

Name Institution
Tahsin FarazEindhoven University of Technology
Maarten van DrunenEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Anupama MallikarjunanAir Products
Iain BuchananAir Products
Dennis M. HausmannLam Research Corporation
Jon HenriLam Research Corporation
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiNx


Plasma SiNx


Film/Plasma Properties

Characteristic: Density
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Wet Etch Resistance
Analysis: Wet Etch

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

SiO2

Keywords

Notes

837