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Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
Type:
Journal
Info:
Plasma Sources Sci. Technol. 28 (2019) 024002
Date:
2018-11-21
Author Information
| Name | Institution |
|---|---|
| Tahsin Faraz | Eindhoven University of Technology |
| Karsten Arts | Eindhoven University of Technology |
| Saurabh Karwal | Eindhoven University of Technology |
| Harm C. M. Knoops | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma TiO2
Plasma HfNx
Plasma SiNx
Film/Plasma Properties
Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer
Characteristic: Ion Flux
Analysis: Custom
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Stress
Analysis: Wafer Curvature
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Wet Etch Resistance
Analysis: TEM, Transmission Electron Microscope
Substrates
| SiO2 |
Notes
| 1278 |