Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties

Type:
Journal
Info:
Plasma Sources Sci. Technol. 28 (2019) 024002
Date:
2018-11-21
DOI:
https://doi.org/10.1088/1361-6595/aaf2c7

Author Information

Name Institution
Tahsin FarazEindhoven University of Technology
Karsten ArtsEindhoven University of Technology
Saurabh KarwalEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma HfNx

Hardware used: Oxford Instruments FlexAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 450C

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3
CAS#: 0-0-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 500C

Film/Plasma Properties

Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer
Diagnostic: Impedans Semion

Characteristic: Ion Flux
Analysis: Custom
Diagnostic: Custom

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Advance

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: KLA-Tencor FLX 2320

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific KA1066 spectrometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone

Characteristic: Wet Etch Resistance
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Substrates

SiO2

Notes

1278