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Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
Type:
Journal
Info:
Plasma Process Polym. 2019;e1900032
Date:
2019-03-29
Author Information
| Name | Institution |
|---|---|
| Noémi Leick | Colorado School of Mines |
| Jochem M.M. Huijs | Eindhoven University of Technology |
| Rafaiel A. Ovanesyan | Colorado School of Mines |
| Dennis M. Hausmann | Lam Research Corporation |
| Sumit Agarwal | Colorado School of Mines |
Films
Plasma SiNx
Plasma SiNx
Film/Plasma Properties
Characteristic: Surface Reactions
Analysis: ATR-FTIR
Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: ATR-FTIR
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: HFS, Hydrogen Forward Scattering
Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Substrates
Notes
| 1355 |