Publication Information

Title:
Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 0, 0 (0), pp null
Date:
2018-03-19

Author Information

Name Institution
Tahsin FarazEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Cristian Van HelvoirtEindhoven University of Technology
Saurabh KarwalEindhoven University of Technology
Akhil SharmaEindhoven University of Technology
Vivek BeladiyaFriedrich-Schiller-Universit├Ąt Jena
Adriana SzeghalmiFriedrich-Schiller-Universit├Ąt Jena
Dennis M. HausmannLam Research Corporation
Jon HenriLam Research Corporation
Mariadriana CreatoreEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films





Plasma SiO2


Plasma SiNx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Stress
Analysis: Wafer Curvature

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Wet Etch Resistance
Analysis: Custom

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

Si(100)
SiO2

Keywords

Substrate Biasing
Plasma-Enhanced Atomic Layer Deposition

Notes

1106