Designing high performance precursors for atomic layer deposition of silicon oxide

Publication Information

Title: Designing high performance precursors for atomic layer deposition of silicon oxide

Type: Journal

Info: J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015

Date: 2014-11-21

DOI: http://dx.doi.org/10.1116/1.4903275

Author Information

Name

Institution

Anupama Mallikarjunan

Air Products

Films

Thermal SiO₂ using Custom

Deposition Temperature = 300C

di(sec-butylamino)silane (DSBAS), ((s-Bu)₂N)SiH₃

0-0-0

Where to buy precursor

10028-15-6

Thermal SiO₂ using Custom

Deposition Temperature = 300C

BTBAS, ((CH₃)₃CNH)₂SiH₂, Bis(Tert-ButylAmido) Silane

186598-40-3

Where to buy precursor

10028-15-6

Thermal SiO₂ using Custom

Deposition Temperature = 300C

Bis(diethylamino)silane, BDEAS, SAM-24, (Et₂N)₂SiH₂

27804-64-4

Where to buy precursor

10028-15-6

Plasma SiO₂ using ASM Eagle XP8

Deposition Temperature = 300C

di(sec-butylamino)silane (DSBAS), ((s-Bu)₂N)SiH₃

0-0-0

Where to buy precursor

7782-44-7

Plasma SiO₂ using ASM Eagle XP8

Deposition Temperature = 300C

BTBAS, ((CH₃)₃CNH)₂SiH₂, Bis(Tert-ButylAmido) Silane

186598-40-3

Where to buy precursor

7782-44-7

Plasma SiO₂ using ASM Eagle XP8

Deposition Temperature = 300C

Bis(diethylamino)silane, BDEAS, SAM-24, (Et₂N)₂SiH₂

27804-64-4

Where to buy precursor

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

226

Shortcuts

Films

Deposition Hardware

Film and Plasma Characteristics

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