Designing high performance precursors for atomic layer deposition of silicon oxide

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-11-21
DOI:
http://dx.doi.org/10.1116/1.4903275

Author Information

Name Institution
Anupama MallikarjunanAir Products

Films

Thermal SiO2

Hardware used: Custom
di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3
CAS#: 0-0-0
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Thermal SiO2

Hardware used: Custom
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Thermal SiO2

Hardware used: Custom
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Plasma SiO2

Hardware used: ASM Eagle XP8
di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma SiO2

Hardware used: ASM Eagle XP8
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma SiO2

Hardware used: ASM Eagle XP8
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Notes

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