Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B129 (2017)
Date:
2016-11-28
DOI:
http://dx.doi.org/10.1116/1.4972208

Author Information

Name Institution
Saurabh KarwalEindhoven University of Technology
B. L. WilliamsEindhoven University of Technology
J.-P. NiemeläEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Mariadriana CreatoreEindhoven University of Technology

Films

Plasma HfNx

Hardware used: Oxford Instruments FlexAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range = 350-450C

Plasma HfNx

Hardware used: Oxford Instruments FlexAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 350-450C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Sigma

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific KA1066 spectrometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Optical Bandgap
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Substrates

Si(100)

Notes

898