Publication Information

Title: Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition

Type: Journal

Info: Journal of Vacuum Science & Technology A 35, 01B129 (2017)

Date: 2016-11-28

DOI: http://dx.doi.org/10.1116/1.4972208

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 350-450C

0-0-0

1333-74-0

Deposition Temperature Range = 350-450C

0-0-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Signatone

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Zeiss Sigma

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific KA1066 spectrometer

Thickness

Ellipsometry

J.A. Woollam M-2000U

Resistivity, Sheet Resistance

Ellipsometry

J.A. Woollam M-2000U

Optical Bandgap

Ellipsometry

J.A. Woollam M-2000U

Substrates

Si(100)

Keywords

Notes

898



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