Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B129 (2017)
Date:
2016-11-28
Author Information
| Name | Institution |
|---|---|
| Saurabh Karwal | Eindhoven University of Technology |
| B. L. Williams | Eindhoven University of Technology |
| J.-P. Niemelä | Eindhoven University of Technology |
| Marcel A. Verheijen | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
| Mariadriana Creatore | Eindhoven University of Technology |
Films
Plasma HfNx
Plasma HfNx
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Characteristic: Optical Bandgap
Analysis: Ellipsometry
Substrates
| Si(100) |
Notes
| 898 |