Publication Information

Title:
Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B130 (2017)
Date:
2016-11-29

Author Information

Name Institution
Akhil SharmaEindhoven University of Technology
Valentino Longoams AG
Marcel A. VerheijenEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma HfO2


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Band Gap
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Si with native oxide
Silicon

Keywords

Notes

844