Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B130 (2017)
Date:
2016-11-29
Author Information
| Name | Institution |
|---|---|
| Akhil Sharma | Eindhoven University of Technology |
| Valentino Longo | ams AG |
| Marcel A. Verheijen | Eindhoven University of Technology |
| Ageeth A. Bol | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma HfO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Band Gap
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Si with native oxide |
| Silicon |
Notes
| 844 |