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Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B130 (2017)
Date:
2016-11-29
DOI:
http://dx.doi.org/10.1116/1.4972210

Author Information

Name Institution
Akhil SharmaEindhoven University of Technology
Valentino Longoams AG
Marcel A. VerheijenEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: AccTec BV

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: AccTec BV

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: NT-MDT Solver P47SPM

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Band Gap
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000F

Substrates

Si with native oxide
Silicon

Notes

844