Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2

Type:
Journal
Info:
J. Phys. Chem. C, 2019, 123 (44), pp 27030-27035
Date:
2019-10-15
DOI:
http://dx.doi.org/10.1021/acs.jpcc.9b08176

Author Information

Name Institution
Karsten ArtsEindhoven University of Technology
Mikko UtriainenVTT Technical Research Centre
Riikka L. PuurunenAalto University
Erwin (W.M.M.) KesselsEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology

Films

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: Custom
Diagnostic: Filmetrics

Substrates

Micropillar Arrays

Notes

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