Publication Information

Title:
Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (11) H852-H859 (2009)
Date:
2009-10-01

Author Information

Name Institution
Christoph HoßbachTechnische Universität Dresden
S. TeichertQimonda
J. ThomasIFW Dresden
L. WildeFraunhofer Center Nanoelectronic Technology
H. WojcikTechnische Universität Dresden
B. AdolphiTechnische Universität Dresden
M. BertramTechnische Universität Dresden
U. MühleQimonda
Matthias AlbertTechnische Universität Dresden
S. MenzelIFW Dresden
B. HintzeQimonda
Johann W. BarthaTechnische Universität Dresden

Films


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: EFTEM, Energy Filtered Transmission Electron Microscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy

Characteristic: Barrier Characteristics
Analysis: BTS, Bias Temperature Stressing

Characteristic: Leakage Current
Analysis: BTS, Bias Temperature Stressing

Substrates

Si(100)
SiO2

Keywords

Atomic Layer Deposition
Diffusion Barrier
Nanostructured Materials
Tantalum Compounds
Thin Film
DRAM Electrode
SAW Devices
Carbon Nanotubes

Notes

Si(100) samples run with and without HF-last
All samples received SC-1 clean.
Ion bombardment lead to film etch under certain conditions
25:1 trench structures studied
TaCN wetted carbon nanotubes
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