Publication Information

Title: Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films

Type: Journal

Info: Journal of The Electrochemical Society, 156 (11) H852-H859 (2009)

Date: 2009-10-01

DOI: http://dx.doi.org/10.1149/1.3205457

Author Information

Name

Institution

Technische Universität Dresden

Qimonda

IFW Dresden

Fraunhofer Center Nanoelectronic Technology

Technische Universität Dresden

Technische Universität Dresden

Technische Universität Dresden

Qimonda

Technische Universität Dresden

IFW Dresden

Qimonda

Technische Universität Dresden

Films

Deposition Temperature Range = 200-350C

169896-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Resistivity, Sheet Resistance

Four-point Probe

-

Thickness

Ellipsometry

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Thickness

XRR, X-Ray Reflectivity

-

Thickness

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Conformality, Step Coverage

TEM, Transmission Electron Microscope

-

Conformality, Step Coverage

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

EFTEM, Energy Filtered Transmission Electron Microscopy

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Density

XRR, X-Ray Reflectivity

-

Density

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

ELS, EELS, Electron Energy Loss Spectroscopy

-

Barrier Characteristics

BTS, Bias Temperature Stressing

-

Leakage Current

BTS, Bias Temperature Stressing

-

Substrates

Si(100)

SiO2

Keywords

Atomic Layer Deposition

Diffusion Barrier

Nanostructured Materials

Tantalum Compounds

Thin Film

DRAM Electrode

SAW Devices

Carbon Nanotubes

Notes

Si(100) samples run with and without HF-last

All samples received SC-1 clean.

Ion bombardment lead to film etch under certain conditions

25:1 trench structures studied

TaCN wetted carbon nanotubes

49



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