Publication Information

Title: Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films

Type: Journal

Info: Journal of The Electrochemical Society, 156 (11) H852-H859 (2009)

Date: 2009-10-01

DOI: http://dx.doi.org/10.1149/1.3205457

Author Information

Name

Institution

Technische Universität Dresden

Qimonda

IFW Dresden

Fraunhofer Center Nanoelectronic Technology

Technische Universität Dresden

Technische Universität Dresden

Technische Universität Dresden

Qimonda

Technische Universität Dresden

IFW Dresden

Qimonda

Technische Universität Dresden

Films

Deposition Temperature Range = 200-350C

169896-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Thickness

Ellipsometry

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Thickness

XRR, X-Ray Reflectivity

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Conformality, Step Coverage

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

EFTEM, Energy Filtered Transmission Electron Microscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Density

XRR, X-Ray Reflectivity

Unknown

Density

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

ELS, EELS, Electron Energy Loss Spectroscopy

Unknown

Barrier Characteristics

BTS, Bias Temperature Stressing

Unknown

Leakage Current

BTS, Bias Temperature Stressing

Unknown

Substrates

Si(100)

SiO2

Keywords

Atomic Layer Deposition

Diffusion Barrier

Nanostructured Materials

Tantalum Compounds

Thin Film

DRAM Electrode

SAW Devices

Carbon Nanotubes

Notes

Si(100) samples run with and without HF-last

All samples received SC-1 clean.

Ion bombardment lead to film etch under certain conditions

25:1 trench structures studied

TaCN wetted carbon nanotubes

49



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