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Evaluation of plasma parameters on PEALD deposited TaCN

Type:
Journal
Info:
Microelectronic Engineering 107 (2013) 156 - 160
Date:
2012-09-12
DOI:
http://dx.doi.org/10.1016/j.mee.2012.08.020

Author Information

Name Institution
Fabien PiallatSTMicroelectronics
Virginie BeuginCEA - LETI MINATEC
Rémy GassilloudCEA - LETI MINATEC
Philippe MichallonCEA - LETI MINATEC
Laurent DussaultGrenoble-CNRS-Université Joseph Fourier
Bernard PelissierGrenoble-CNRS-Université Joseph Fourier
Timo AsikainenASM Microchemistry Oy
Jan Willem MaesASM Microchemistry Oy
François MartinCEA - LETI MINATEC
Pierre MorinSTMicroelectronics
Christophe ValléeGrenoble-CNRS-Université Joseph Fourier

Films

Plasma TaCN

Hardware used: ASM EmerALD
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 325C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Napson WS-3000

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Jordan Valley JVX 6200

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Jordan Valley JVX 6200

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Jordan Valley JVX 6200

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Substrates

Si(111)
SiO2

Notes

647