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Publication Information

Title: Evaluation of plasma parameters on PEALD deposited TaCN

Type: Journal

Info: Microelectronic Engineering 107 (2013) 156 - 160

Date: 2012-09-12

DOI: http://dx.doi.org/10.1016/j.mee.2012.08.020

Author Information

Name

Institution

STMicroelectronics

CEA - LETI MINATEC

CEA - LETI MINATEC

CEA - LETI MINATEC

Grenoble-CNRS-Université Joseph Fourier

Grenoble-CNRS-Université Joseph Fourier

ASM Microchemistry Oy

ASM Microchemistry Oy

CEA - LETI MINATEC

STMicroelectronics

Grenoble-CNRS-Université Joseph Fourier

Films

Plasma TaCN using ASM EmerALD

Deposition Temperature = 325C

169896-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Napson WS-3000

Thickness

XRR, X-Ray Reflectivity

Jordan Valley JVX 6200

Density

XRR, X-Ray Reflectivity

Jordan Valley JVX 6200

Morphology, Roughness, Topography

XRR, X-Ray Reflectivity

Jordan Valley JVX 6200

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MPD X-ray Diffractometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Substrates

Si(111)

SiO2

Keywords

Notes

647


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