Evaluation of plasma parameters on PEALD deposited TaCN
Type:
Journal
Info:
Microelectronic Engineering 107 (2013) 156 - 160
Date:
2012-09-12
Author Information
| Name | Institution |
|---|---|
| Fabien Piallat | STMicroelectronics |
| Virginie Beugin | CEA - LETI MINATEC |
| Rémy Gassilloud | CEA - LETI MINATEC |
| Philippe Michallon | CEA - LETI MINATEC |
| Laurent Dussault | Grenoble-CNRS-Université Joseph Fourier |
| Bernard Pelissier | Grenoble-CNRS-Université Joseph Fourier |
| Timo Asikainen | ASM Microchemistry Oy |
| Jan Willem Maes | ASM Microchemistry Oy |
| François Martin | CEA - LETI MINATEC |
| Pierre Morin | STMicroelectronics |
| Christophe Vallée | Grenoble-CNRS-Université Joseph Fourier |
Films
Plasma TaCN
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si(111) |
| SiO2 |
Notes
| 647 |