Publication Information

Title:
Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(2), Mar/Apr 2012
Date:
2012-02-10

Author Information

Name Institution
Tonmoy ChakrabortyState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: FIB, Focused Ion Beam

Characteristic: Morphology, Roughness, Topography
Analysis: STM, Scanning Tunneling Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

SiO2

Keywords

Copper Electroplating
Interconnect
Diffusion Barrier

Notes

150C forming gas anneal
71