Publication Information

Title:
Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
Type:
Journal
Info:
Journal of The Electrochemical Society, 149 (1) C28-C32 (2002)
Date:
2001-08-27

Author Information

Name Institution
Jin-Seong ParkKorea Advanced Institute of Science and Technology
Hyung-Sang ParkGenitech Co., Ltd.
Sang-Won KangKorea Advanced Institute of Science and Technology

Films


Thermal TaNx


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Substrates

SiO2

Keywords

Plasma vs Thermal Comparison

Notes

Precursor vapor pressure 0.021Torr at 70C
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