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Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
Type:
Journal
Info:
Journal of The Electrochemical Society, 149 (1) C28-C32 (2002)
Date:
2001-08-27
Author Information
| Name | Institution |
|---|---|
| Jin-Seong Park | Korea Advanced Institute of Science and Technology |
| Hyung-Sang Park | Genitech Co., Ltd. |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Substrates
| SiO2 |
Notes
| Precursor vapor pressure 0.021Torr at 70C |
| 1228 |