Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films

Type: Journal

Info: Journal of The Electrochemical Society, 149 (1) C28-C32 (2002)

Date: 2001-08-27

DOI: http://dx.doi.org/10.1149/1.1423642

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Genitech Co., Ltd.

Korea Advanced Institute of Science and Technology

Films

Plasma TaNx using Custom

Deposition Temperature = 260C

169896-41-7

1333-74-0

Thermal TaNx using Custom

Deposition Temperature = 260C

169896-41-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

-

Thickness

SEM, Scanning Electron Microscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Density

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Substrates

SiO2

Keywords

Plasma vs Thermal Comparison

Notes

Precursor vapor pressure 0.021Torr at 70C

1228



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