Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas

Type: Journal

Info: Electrochemical and Solid-State Letters, 13 (12) H426-H427 (2010)

Date: 2010-09-07

DOI: http://dx.doi.org/10.1149/1.3490413

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Films

Plasma TaCN using Custom

Deposition Temperature Range N/A

169896-41-7

1333-74-0

74-82-8

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Work Function

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Fixed Charge

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Resistivity, Sheet Resistance

Four-point Probe

Keithley 2400 Source Meter

Thickness

XRR, X-Ray Reflectivity

-

Density

XRR, X-Ray Reflectivity

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Bonding States

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Morphology, Roughness, Topography

Unknown

-

Substrates

SiO2

Keywords

Gate Metal

Notes

Interesting sloped SiO2 film on Si by dipping in HF and slowly pulling it out.

450C anneal for 30min in forming gas.

80



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