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Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 13 (12) H426-H427 (2010)
Date:
2010-09-07
Author Information
| Name | Institution |
|---|---|
| Gi-hee Cho | Pohang University of Science and Technology (POSTECH) |
| Shi-Woo Rhee | Pohang University of Science and Technology (POSTECH) |
Films
Film/Plasma Properties
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Morphology, Roughness, Topography
Analysis: -
Substrates
| SiO2 |
Notes
| Interesting sloped SiO2 film on Si by dipping in HF and slowly pulling it out. |
| 450C anneal for 30min in forming gas. |
| 80 |