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Publication Information

Title: Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition

Type: Journal

Info: Microelectronic Engineering 87 (2010) 1391 - 1395

Date: 2009-11-27

DOI: http://dx.doi.org/10.1016/j.mee.2009.11.163

Author Information

Name

Institution

Korea Institute of Industrial Technology

Korea Institute of Industrial Technology

Korea Institute of Industrial Technology

Korea Institute of Industrial Technology

Korea Institute of Industrial Technology

Korea Institute of Industrial Technology

Films

Plasma Ru using Custom

Deposition Temperature = 290C

32992-96-4

7664-41-7

Plasma TaNx using Custom

Deposition Temperature = 300C

169896-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Conformality, Step Coverage

TEM, Transmission Electron Microscope

FEI Quanta 200 FEG

Thickness

TEM, Transmission Electron Microscope

FEI Quanta 200 FEG

Images

TEM, Transmission Electron Microscope

FEI Quanta 200 FEG

Microstructure

TEM, Transmission Electron Microscope

FEI Quanta 200 FEG

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Resistivity, Sheet Resistance

Unknown

Unknown

Substrates

Si(100)

TaN

Keywords

Diffusion Barrier

Interconnect

Notes

712

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I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com

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