Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers

Type:
Journal
Info:
ECS Transactions, 6 (8) 77-88 (2007)
Date:
2007-05-09
DOI:
http://dx.doi.org/10.1149/1.2794456

Author Information

Name Institution
Sumit KumarState University of New York at Albany
Daniel V. GreenslitState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma Ru

Hardware used: Unknown
Ethylmethylruthenocene
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Plasma Ru

Hardware used: Unknown
Ethylcyclopentadienyl pyrrolyl ruthenium
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Plasma TaNx

Hardware used: Unknown
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Custom
Diagnostic: -

Substrates

SiO2
TaN

Notes

1319