Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 29, 030605 (2011)
Date:
2011-04-11
DOI:
http://dx.doi.org/10.1116/1.3585664

Author Information

Name Institution
Tonmoy ChakrabortyState University of New York at Albany
Daniel V. GreenslitState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma RuTaN

Hardware used: Custom
Ethylcyclopentadienyl pyrrolyl ruthenium
CAS#: 0-0-0
TBTDET, Tert-Butylimido Tris(DiEthylamino) Tantalum, Ta[N(C2H5)2]3[=NC(CH3)3]
CAS#: 169896-41-7
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone SYS-301 resistivity probing system

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Substrates

SiO2

Keywords

Interconnect

Notes

690