Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia

Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (10) H823-H828 (2008)
Date:
2008-07-10
DOI:
http://dx.doi.org/10.1149/1.2967333

Author Information

Name Institution
Moon-Kyun SongPohang University of Science and Technology (POSTECH)
Shi-Woo RheePohang University of Science and Technology (POSTECH)

Films

Plasma TaCN

Hardware used: Custom Direct Capacitively Coupled Plasma
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-840A

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: MAC Scientific Co., M18XHF

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Substrates

SiO2

Notes

1343