The Properties of Cu Thin Films on Ru Depending on the ALD Temperature

Type:
Journal
Info:
Journal of Nanoscience and Nanotechnology, Volume 15, Number 2, pp. 1601-1604
Date:
2015-02-01
DOI:
http://dx.doi.org/doi:10.1166/jnn.2015.9286

Author Information

Name Institution
Hyeong-Chul YoonSungkyunkwan University
Jin-Ha ShinSungkyunkwan University
Hwa-Sun ParkSungkyunkwan University
Su-Jeong SuhSungkyunkwan University

Films

Plasma TaNx

Hardware used: Unknown
TBTDET, Tert-Butylimido Tris(DiEthylamino) Tantalum, Ta[N(C2H5)2]3[=NC(CH3)3]
CAS#: 169896-41-7
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H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range N/A

Plasma Ru

Hardware used: Unknown
(2,4-dimethylpentadienyl) (ethylcyclopentadienyl) ruthenium [Ru(DMPD)(EtCp)]
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

SiO2
TaN

Keywords

Diffusion Barrier
Interconnect

Notes

543