Publication Information

Title:
Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
Type:
Journal
Info:
Chem. Vap. Deposition 2008, 14, 334–338
Date:
2008-12-16

Author Information

Name Institution
Moon-Kyun SongPohang University of Science and Technology (POSTECH)
Shi-Woo RheePohang University of Science and Technology (POSTECH)

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: NMR, Nuclear Magnetic Resonance

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

SiO2

Keywords

Gate Metal
Plasma-Enhanced Atomic Layer Deposition
Tantalum Nitride

Notes

TBTDET vapor pressure information with reference.
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