Publication Information

Title: The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications

Type: Conference Proceedings

Info: Mat. Res. Soc. Symp. Proc. Vol. 766 E10.4.1

Date: 2003-01-01

DOI: http://dx.doi.org/10.1557/PROC-766-E10.4

Author Information

Name

Institution

State University of New York at Albany

State University of New York at Albany

Films

Deposition Temperature Range N/A

169896-41-7

1333-74-0

Deposition Temperature Range N/A

169896-41-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Resistivity, Sheet Resistance

Four-point Probe

-

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Thickness

XRR, X-Ray Reflectivity

-

Barrier Characteristics

RBS, Rutherford Backscattering Spectrometry

-

Substrates

Si(100)

SiO2

Keywords

Diffusion Barrier

Notes

Si(100) samples HF cleaned.

Barrier test samples Ar annealed 450, 550, and 650C.

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