Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications

Type:
Journal
Info:
J. Vac. Sci. Technol. A 27(3), May/Jun 2009
Date:
2009-04-28
DOI:
http://dx.doi.org/10.1116/1.3122664

Author Information

Name Institution
Sumit KumarState University of New York at Albany
Daniel V. GreenslitState University of New York at Albany
Tonmoy ChakrabortyState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma RuTaN

Hardware used: Custom
Ethylcyclopentadienyl pyrrolyl ruthenium
CAS#: 0-0-0
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Barrier Characteristics
Analysis: TVS, Triangle Voltage Sweep
Diagnostic: Materials Development Corporation

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone SYS-301 resistivity probing system

Substrates

SiO2

Notes

Praxair Ru precursor.
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