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Publication Information

Title: Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications

Type: Journal

Info: J. Vac. Sci. Technol. A 27(3), May/Jun 2009

Date: 2009-04-28

DOI: http://dx.doi.org/10.1116/1.3122664

Author Information

Name

Institution

State University of New York at Albany

State University of New York at Albany

State University of New York at Albany

State University of New York at Albany

Films

Plasma RuTaN using Custom

Deposition Temperature = 300C

0-0-0

169896-41-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

JEOL 2010F

Conformality, Step Coverage

TEM, Transmission Electron Microscope

JEOL 2010F

Microstructure

TEM, Transmission Electron Microscope

JEOL 2010F

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Barrier Characteristics

TVS, Triangle Voltage Sweep

Materials Development Corporation

Resistivity, Sheet Resistance

Four-point Probe

Signatone SYS-301 resistivity probing system

Substrates

SiO2

Keywords

Notes

Praxair Ru precursor.

118



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