Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V

Type:
Journal
Info:
Applied Surface Science 303 (2014) 388 - 392
Date:
2014-03-02

Author Information

Name Institution
Fabien PiallatSTMicroelectronics
Virginie BeuginSTMicroelectronics
Rémy GassilloudCEA - LETI MINATEC
Laurent DussaultLTM-CNRS, Laboratoire des technologies de la Microélectronique
Bernard PelissierLTM-CNRS, Laboratoire des technologies de la Microélectronique
Charles LerouxCEA - LETI MINATEC
Pierre CaubetSTMicroelectronics
Christophe ValléeLTM-CNRS, Laboratoire des technologies de la Microélectronique

Films


Thermal HfO2

Hardware used: Unknown


CAS#: 7732-18-5

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

HfO2

Keywords

Notes

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