Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Hafnium Tetrachloride, HfCl4, CAS# 13499-05-3

Where to buy

NumberVendorRegionLink
1Ereztech🇺🇸Hafnium (IV) Chloride
2Pegasus Chemicals🇬🇧Hafnium tetrachloride
3Entegris🇺🇸HfCl4

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 8 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
2Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
3Radical Enhanced Atomic Layer Deposition of Metals and Oxides
4Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
5Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
6Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
7Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
8High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning