Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
Type:
Journal
Info:
Crystals 2022, 12, 1115
Date:
2022-08-04
Author Information
| Name | Institution |
|---|---|
| Markus Neuber | Fraunhofer IPMS |
| Maximilian Walter Lederer | Fraunhofer IPMS |
| Konstantin Mertens | Fraunhofer IPMS |
| Thomas Kämpfe | Fraunhofer IPMS |
| Malte Czernohorsky | Fraunhofer IPMS |
| Konrad Seidel | Fraunhofer IPMS |
Films
Thermal HfSiOx
Other HfSiOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Ferroelectricity
Analysis: P-V, Polarization-Voltage Measurements
Characteristic: Pyroelectric Properties
Analysis: Pyroelectric Measurements
Substrates
| TiN |
Notes
| The deposition listed using the ASM EmerALD system deposited the HfO2 on the ASM Pulsar3000 with HfCl4 and H2O at 300C and the SiO2 doping layer on an ASM EmerALD with BDEAS and O2 plasma at 50C. |
| 1748 |