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Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Type:
Journal
Info:
Crystals 2022, 12, 1115
Date:
2022-08-04
DOI:
http://dx.doi.org/10.3390/cryst12081115

Author Information

Name Institution
Markus NeuberFraunhofer IPMS
Maximilian Walter LedererFraunhofer IPMS
Konstantin MertensFraunhofer IPMS
Thomas KämpfeFraunhofer IPMS
Malte CzernohorskyFraunhofer IPMS
Konrad SeidelFraunhofer IPMS

Films

Thermal HfSiOx

Hardware used: ASM Pulsar 3000
Hafnium Tetrachloride, HfCl4
CAS#: 13499-05-3
SiCl4, Silicon Tetrachloride
CAS#: 10026-04-7
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Other HfSiOx

Hardware used: ASM EmerALD
Hafnium Tetrachloride, HfCl4
CAS#: 13499-05-3
H2O, Water
CAS#: 7732-18-5
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: KLA-Tencor SpectraFx

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: ReVera Veraflex

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Ferroelectricity
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: Custom

Characteristic: Pyroelectric Properties
Analysis: Pyroelectric Measurements
Diagnostic: Custom

Substrates

TiN

Notes

The deposition listed using the ASM EmerALD system deposited the HfO2 on the ASM Pulsar3000 with HfCl4 and H2O at 300C and the SiO2 doping layer on an ASM EmerALD with BDEAS and O2 plasma at 50C.
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