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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
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HfSiOx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfSiOx films returned 16 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
2Optical properties and bandgap evolution of ALD HfSiOx films
3High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
4Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
5Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
6TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
7The effects of layering in ferroelectric Si-doped HfO2 thin films
8Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
9Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
10Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
11Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
12Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
13Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
14Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
15Annealing behavior of ferroelectric Si-doped HfO2 thin films
16Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4