Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


HfSiOx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfSiOx films returned 16 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
2Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
3Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
4Optical properties and bandgap evolution of ALD HfSiOx films
5Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
6Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
7Annealing behavior of ferroelectric Si-doped HfO2 thin films
8Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
9Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
10High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
11Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
12The effects of layering in ferroelectric Si-doped HfO2 thin films
13Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
14Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
15TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
16Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing