About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 35, 011206 (2017)
Date:
2016-12-27

Author Information

Name Institution
David HaysUniversity of Florida
Brent P. GilaUniversity of Florida
S. J. PeartonUniversity of Florida
Andres TruccoUniversity of Florida
Ryan ThorpeRutgers University
Wei RenUniversity of Florida

Films

Plasma SiO2




Film/Plasma Properties

Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy

Substrates

IGZO
Quartz

Notes

Tested if starting with HfO2 or SiO2 impacted results.
855