Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 35, 011206 (2017)
Date:
2016-12-27
DOI:
http://dx.doi.org/10.1116/1.4973882

Author Information

Name Institution
David HaysUniversity of Florida
Brent P. GilaUniversity of Florida
S. J. PeartonUniversity of Florida
Andres TruccoUniversity of Florida
Ryan ThorpeRutgers University
Wei RenUniversity of Florida

Films

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma HfSiOx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5100 ESCA

Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy
Diagnostic: PerkinElmer lambda 800 Spectrophotometer

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Diagnostic: -

Substrates

IGZO
Quartz

Notes

Tested if starting with HfO2 or SiO2 impacted results.
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