Publication Information

Title: Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4

Type: Journal

Info: Journal of Vacuum Science & Technology B 35, 011206 (2017)

Date: 2016-12-27

DOI: http://dx.doi.org/10.1116/1.4973882

Author Information

Name

Institution

University of Florida

University of Florida

University of Florida

University of Florida

Rutgers University

University of Florida

Films

Deposition Temperature = 200C

15112-89-7

7782-44-7

Deposition Temperature = 200C

19962-11-9

15112-89-7

7782-44-7

Deposition Temperature = 200C

19962-11-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Valence Band

XPS, X-ray Photoelectron Spectroscopy

Physical Electronics PHI 5100 ESCA

Band Gap

UV-VIS Spectroscopy

PerkinElmer lambda 800 Spectrophotometer

Band Gap

REELS, Reflection Electron Energy Loss Spectroscopy

-

Substrates

IGZO

Quartz

Keywords

Notes

Tested if starting with HfO2 or SiO2 impacted results.

855



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