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The publication database currently has 1531 entries.
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189 Films Compositions
401 Precursors and Plasma Gases
74 Deposition Hardwares
239 Film and Plasma Characteristics
82 Theses

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Recent Database Additions
Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
Search 1531 plasma ALD publications by:
189 Films Compositions
401 Precursors and Plasma Gases
74 Deposition Hardwares
239 Film and Plasma Characteristics

S. J. Pearton Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by S. J. Pearton returned 10 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74
2Band alignment of Al2O3 with (-201) β-Ga2O3
3Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
4Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
5Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
6Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
7Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
8Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
9GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
10High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors

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