Publication Information

Title: Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3

Type: Journal

Info: Japanese Journal of Applied Physics 56, 071101 (2017)

Date: 2017-05-08

DOI: https://doi.org/10.7567/JJAP.56.071101

Author Information

Name

Institution

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

Dankook University

Tamura Corporation

Films

Deposition Temperature = 200C

15112-89-7

7782-44-7

Deposition Temperature = 200C

19962-11-9

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Valence Band Offset

XPS, X-ray Photoelectron Spectroscopy

Physical Electronics PHI 5100 ESCA

Band Gap

REELS, Reflection Electron Energy Loss Spectroscopy

-

Substrates

Ga2O3

Quartz

Keywords

Notes

1070



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