Publication Information

Title:
Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
Type:
Journal
Info:
Japanese Journal of Applied Physics 56, 071101 (2017)
Date:
2017-05-08

Author Information

Name Institution
Patrick H. Carey IVUniversity of Florida
Fan RenUniversity of Florida
David HaysUniversity of Florida
Brent P. GilaUniversity of Florida
S. J. PeartonUniversity of Florida
Soohwan JangDankook University
A. KuramataTamura Corporation

Films



Film/Plasma Properties

Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy

Substrates

Ga2O3
Quartz

Keywords

Notes

1070