Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
Type:
Journal
Info:
Japanese Journal of Applied Physics 56, 071101 (2017)
Date:
2017-05-08
Author Information
| Name | Institution |
|---|---|
| Patrick H. Carey IV | University of Florida |
| Fan Ren | University of Florida |
| David Hays | University of Florida |
| Brent P. Gila | University of Florida |
| S. J. Pearton | University of Florida |
| Soohwan Jang | Dankook University |
| A. Kuramata | Tamura Corporation |
Films
Plasma SiO2
Plasma HfSiOx
Film/Plasma Properties
Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Substrates
| Ga2O3 |
| Quartz |
Notes
| 1070 |