Publication Information

Title: Comparison of passivation layers for AlGaN/GaN high electron mobility transistors

Type: Journal

Info: J. Vac. Sci. Technol. B 29, 061204 (2011)

Date: 2011-10-27

DOI: http://dx.doi.org/10.1116/1.3656390

Author Information

Name

Institution

U.S. Air Force Research Laboratory

U.S. Air Force Research Laboratory

U.S. Air Force Research Laboratory

U.S. Air Force Research Laboratory

U.S. Air Force Research Laboratory

U.S. Air Force Research Laboratory

U.S. Air Force Research Laboratory

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

Films

Deposition Temperature Range N/A

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

AlGaN

Keywords

Notes

Comparison of HEMT performance vs different passivation schemes PECVD SiNx and thermal ALD Al2O3 and HfO2.

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