Publication Information

Title:
Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
Type:
Journal
Info:
J. Vac. Sci. Technol. B 29, 061204 (2011)
Date:
2011-10-27

Author Information

Name Institution
R. C. FitchU.S. Air Force Research Laboratory
D. E. Walker Jr.U.S. Air Force Research Laboratory
K. D. ChabakU.S. Air Force Research Laboratory
J. K. GillespieU.S. Air Force Research Laboratory
M. KosslerU.S. Air Force Research Laboratory
M. TrejoU.S. Air Force Research Laboratory
A. CrespoU.S. Air Force Research Laboratory
Lu LiuUniversity of Florida
T. S. KangUniversity of Florida
C-F LoUniversity of Florida
Fan RenUniversity of Florida
D. J. CheneyUniversity of Florida
S. J. PeartonUniversity of Florida

Films

Thermal Al2O3


Thermal HfO2


Film/Plasma Properties

Substrates

AlGaN

Keywords

Notes

Comparison of HEMT performance vs different passivation schemes PECVD SiNx and thermal ALD Al2O3 and HfO2.
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