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Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
Type:
Journal
Info:
J. Vac. Sci. Technol. B 29, 061204 (2011)
Date:
2011-10-27
Author Information
| Name | Institution |
|---|---|
| R. C. Fitch | U.S. Air Force Research Laboratory |
| D. E. Walker Jr. | U.S. Air Force Research Laboratory |
| K. D. Chabak | U.S. Air Force Research Laboratory |
| J. K. Gillespie | U.S. Air Force Research Laboratory |
| M. Kossler | U.S. Air Force Research Laboratory |
| M. Trejo | U.S. Air Force Research Laboratory |
| A. Crespo | U.S. Air Force Research Laboratory |
| Lu Liu | University of Florida |
| T. S. Kang | University of Florida |
| C-F Lo | University of Florida |
| Fan Ren | University of Florida |
| D. J. Cheney | University of Florida |
| S. J. Pearton | University of Florida |
Films
Thermal Al2O3
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Thermal HfO2
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Film/Plasma Properties
Substrates
| AlGaN |
Notes
| Comparison of HEMT performance vs different passivation schemes PECVD SiNx and thermal ALD Al2O3 and HfO2. |
| 104 |