Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
Type:
Journal
Info:
J. Vac. Sci. Technol. B 3(6), Nov/Dec 2018
Date:
2018-10-16
Author Information
| Name | Institution |
|---|---|
| Chaker Fares | University of Florida |
| Fan Ren | University of Florida |
| Eric Lambers | University of Florida |
| David Hays | University of Florida |
| Brent P. Gila | University of Florida |
| S. J. Pearton | University of Florida |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Substrates
| AlGaO |
| Quartz |
Notes
| 1212 |