Publication Information

Title: Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3

Type: Journal

Info: J. Vac. Sci. Technol. B 3(6), Nov/Dec 2018

Date: 2018-10-16

DOI: http://dx.doi.org/10.1116/1.5052620

Author Information

Name

Institution

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

Films

Deposition Temperature = 200C

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Physical Electronics PHI 5100 ESCA

Valence Band Offset

XPS, X-ray Photoelectron Spectroscopy

Physical Electronics PHI 5100 ESCA

Band Gap

REELS, Reflection Electron Energy Loss Spectroscopy

-

Substrates

AlGaO

Quartz

Keywords

Notes

1212



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