Publication Information

Title:
Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
Type:
Journal
Info:
J. Vac. Sci. Technol. B 3(6), Nov/Dec 2018
Date:
2018-10-16

Author Information

Name Institution
Chaker FaresUniversity of Florida
Fan RenUniversity of Florida
Eric LambersUniversity of Florida
David HaysUniversity of Florida
Brent P. GilaUniversity of Florida
S. J. PeartonUniversity of Florida

Films


Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy

Substrates

AlGaO
Quartz

Keywords

Notes

1212