Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2018 volume 7, issue 10, P519-P523
Date:
2018-09-07
Author Information
| Name | Institution |
|---|---|
| Chaker Fares | University of Florida |
| Fan Ren | University of Florida |
| Eric Lambers | University of Florida |
| David Hays | University of Florida |
| Brent P. Gila | University of Florida |
| S. J. Pearton | University of Florida |
Films
Plasma HfSiOx
Film/Plasma Properties
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Substrates
| AlGaO |
| Quartz |
Notes
| 1213 |