Publication Information

Title:
Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2018 volume 7, issue 10, P519-P523
Date:
2018-09-07

Author Information

Name Institution
Chaker FaresUniversity of Florida
Fan RenUniversity of Florida
Eric LambersUniversity of Florida
David HaysUniversity of Florida
Brent P. GilaUniversity of Florida
S. J. PeartonUniversity of Florida

Films


Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy

Substrates

AlGaO
Quartz

Keywords

Notes

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