About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74

Type:
Journal
Info:
ECS Journal of Solid State Science and Technology, 2020 9 045001
Date:
2020-03-18

Author Information

Name Institution
Chaker FaresUniversity of Florida
Minghan XianUniversity of Florida
David J. SmithArizona State University
M. R. McCartneyArizona State University
Max KneissUniversität Leipzig
Holger von WencksternUniversität Leipzig
Marius GrundmannUniversität Leipzig
Marko J. TadjerU.S. Naval Research Laboratory
Fan RenUniversity of Florida
S. J. PeartonUniversity of Florida

Films

Plasma SiO2


Film/Plasma Properties

Characteristic: Band Alignment
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

IGO

Notes

1523