Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74
Type:
Journal
Info:
ECS Journal of Solid State Science and Technology, 2020 9 045001
Date:
2020-03-18
Author Information
| Name | Institution |
|---|---|
| Chaker Fares | University of Florida |
| Minghan Xian | University of Florida |
| David J. Smith | Arizona State University |
| M. R. McCartney | Arizona State University |
| Max Kneiss | Universität Leipzig |
| Holger von Wenckstern | Universität Leipzig |
| Marius Grundmann | Universität Leipzig |
| Marko J. Tadjer | U.S. Naval Research Laboratory |
| Fan Ren | University of Florida |
| S. J. Pearton | University of Florida |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Band Alignment
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| IGO |
Notes
| 1523 |