Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74

Type:
Journal
Info:
ECS Journal of Solid State Science and Technology, 2020 9 045001
Date:
2020-03-18

Author Information

Name Institution
Chaker FaresUniversity of Florida
Minghan XianUniversity of Florida
David J. SmithArizona State University
M. R. McCartneyArizona State University
Max KneissUniversität Leipzig
Holger von WencksternUniversität Leipzig
Marius GrundmannUniversität Leipzig
Marko J. TadjerU.S. Naval Research Laboratory
Fan RenUniversity of Florida
S. J. PeartonUniversity of Florida

Films


Film/Plasma Properties

Characteristic: Band Alignment
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

IGO

Keywords

Notes

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