High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Type:
Journal
Info:
J. Vac. Sci. Technol. B 32(5), Sep/Oct 2014
Date:
2014-07-21
DOI:
http://dx.doi.org/10.1116/1.4891966

Author Information

Name Institution
Ya-Hsi HwangUniversity of Florida
Shihyun AhnUniversity of Florida
Dong ChenUniversity of Florida
Fan RenUniversity of Florida
Brent P. GilaUniversity of Florida
David HaysUniversity of Florida
S. J. PeartonUniversity of Florida
C-F LoIQE
Jerry W. JohnsonIQE

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Refractive Index
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: DC Characteristics
Analysis: -
Diagnostic: Tektronix 370A Curve Tracer

Characteristic: DC Characteristics
Analysis: -
Diagnostic: HP 4156B Semiconductor Parameter Analyzer

Substrates

Notes

Substrate surface cleaned with O3 and NH4OH before ALD.
AlN gate dielectric also acts as a passivation layer.
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