Publication Information

Title:
High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Type:
Journal
Info:
J. Vac. Sci. Technol. B 32(5), Sep/Oct 2014
Date:
2014-07-21

Author Information

Name Institution
Ya-Hsi HwangUniversity of Florida
Shihyun AhnUniversity of Florida
Dong ChenUniversity of Florida
Fan RenUniversity of Florida
Brent P. GilaUniversity of Florida
David HaysUniversity of Florida
S. J. PeartonUniversity of Florida
C-F LoIQE
Jerry W. JohnsonIQE

Films


Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Refractive Index
Analysis: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: DC Characteristics
Analysis: -

Characteristic: DC Characteristics
Analysis: -

Substrates

Keywords

HEMT, High Electron Mobility Transistor

Notes

Substrate surface cleaned with O3 and NH4OH before ALD.
AlN gate dielectric also acts as a passivation layer.
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