GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
Type:
Journal
Info:
J. Vac. Sci. Technol. B 31(5), Sep/Oct 2013
Date:
2013-07-30
Author Information
| Name | Institution |
|---|---|
| Ya-Hsi Hwang | University of Florida |
| Lu Liu | University of Florida |
| Camilo Velez | University of Florida |
| Fan Ren | University of Florida |
| Brent P. Gila | University of Florida |
| David Hays | University of Florida |
| S. J. Pearton | University of Florida |
| Eric Lambers | University of Florida |
| Ivan I. Kravchenko | Oak Ridge National Laboratory |
| C-F Lo | IQE |
| Jerry W. Johnson | IQE |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: On/Off Current Ratio
Analysis: -
Characteristic: Transconductance
Analysis: -
Substrates
Notes
| Substrate surface cleaned with O3 and NH4OH before ALD. |
| Additional HEMT electrical properties are reported. |
| 130 |