Publication Information

Title:
GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
Type:
Journal
Info:
J. Vac. Sci. Technol. B 31(5), Sep/Oct 2013
Date:
2013-07-30

Author Information

Name Institution
Ya-Hsi HwangUniversity of Florida
Lu LiuUniversity of Florida
Camilo VelezUniversity of Florida
Fan RenUniversity of Florida
Brent P. GilaUniversity of Florida
David HaysUniversity of Florida
S. J. PeartonUniversity of Florida
Eric LambersUniversity of Florida
Ivan I. KravchenkoOak Ridge National Laboratory
C-F LoIQE
Jerry W. JohnsonIQE

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: On/Off Current Ratio
Analysis: -

Characteristic: Transconductance
Analysis: -

Substrates

Keywords

HEMT, High Electron Mobility Transistor

Notes

Substrate surface cleaned with O3 and NH4OH before ALD.
Additional HEMT electrical properties are reported.
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