Publication Information

Title: The effects of layering in ferroelectric Si-doped HfO2 thin films

Type: Journal

Info: APPLIED PHYSICS LETTERS 105, 072906 (2014)

Date: 2014-08-11

DOI: http://dx.doi.org/10.1063/1.4893738

Author Information

Name

Institution

University of Florida

University of Florida

North Carolina State University

North Carolina State University

North Carolina State University

North Carolina State University

University of Florida

University of Florida

Films

Deposition Temperature Range N/A

19962-11-9

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

Unknown

Thickness

Ellipsometry

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

FEI Titan

Chemical Composition, Impurities

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Unknown

Compositional Depth Profiling

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Unknown

Remanent Polarization

Unknown

Unknown

Substrates

Silicon

Keywords

Ferroelectrics

PEALD Film Development

Notes

Substrates HF dipped.

Deposited films received RTA processing.

121



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