Publication Information

Title:
The effects of layering in ferroelectric Si-doped HfO2 thin films
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 105, 072906 (2014)
Date:
2014-08-11

Author Information

Name Institution
Patrick D. LomenzoUniversity of Florida
Qanit TakmeelUniversity of Florida
Chuanzhen ZhouNorth Carolina State University
Yang LiuNorth Carolina State University
Chris M. FancherNorth Carolina State University
Jacob L. JonesNorth Carolina State University
Saeed MoghaddamUniversity of Florida
Toshikazu NishidaUniversity of Florida

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Remanent Polarization
Analysis: -

Substrates

Silicon

Keywords

Ferroelectrics
PEALD Film Development

Notes

Substrates HF dipped.
Deposited films received RTA processing.
121