Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor

Type:
Journal
Info:
Ceramics International 46 (2020) 10121-10129
Date:
2020-01-01

Author Information

Name Institution
Jae-Hwan KimHongik University
Tran Thi Ngoc VanHongik University
Jiwon OhHongik University
Seung-Muk BaeKunsan National University
Sang-Ick LeeDNF Co. Ltd.
Bonggeun ShongHongik University
Jin-Ha HwangHongik University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Wet Etch Resistance
Analysis: -

Substrates

Silicon

Keywords

Notes

1557