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Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor

Type:
Journal
Info:
Ceramics International 46 (2020) 10121-10129
Date:
2020-01-01
DOI:
https://doi.org/10.1016/j.ceramint.2020.01.002

Author Information

Name Institution
Jae-Hwan KimHongik University
Tran Thi Ngoc VanHongik University
Jiwon OhHongik University
Seung-Muk BaeKunsan National University
Sang-Ick LeeDNF Co. Ltd.
Bonggeun ShongHongik University
Jin-Ha HwangHongik University

Films

Plasma HfSiOx

Hardware used: Custom
Bis(dimethylamino) [(methylaminodimethylsilyl) methylcyclopentadienyl] hafnium(IV), (DNSHf, Hf[η5:η1-Cp(CH2 ) (SiMe2)NMe](NMe2)2
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 160-280C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-2000

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

1557