
Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
Type:
Journal
Info:
Ceramics International 46 (2020) 10121-10129
Date:
2020-01-01
Author Information
Name | Institution |
---|---|
Jae-Hwan Kim | Hongik University |
Tran Thi Ngoc Van | Hongik University |
Jiwon Oh | Hongik University |
Seung-Muk Bae | Kunsan National University |
Sang-Ick Lee | DNF Co. Ltd. |
Bonggeun Shong | Hongik University |
Jin-Ha Hwang | Hongik University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Wet Etch Resistance
Analysis: -
Substrates
Silicon |
Notes
1557 |