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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 32, 03D123 (2014)
Date:
2014-04-15
Author Information
| Name | Institution |
|---|---|
| Patrick D. Lomenzo | University of Florida |
| Peng Zhao | University of Florida |
| Qanit Takmeel | University of Florida |
| Saeed Moghaddam | University of Florida |
| Toshikazu Nishida | University of Florida |
| Matthew Nelson | North Carolina State University |
| Chris M. Fancher | North Carolina State University |
| Everett D. Grimley | North Carolina State University |
| Xiahan Sang | North Carolina State University |
| James M. LeBeau | North Carolina State University |
| Jacob L. Jones | North Carolina State University |
Films
Plasma HfSiOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: Sawyer-Tower circuit
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Substrates
| Si(100) |
Keywords
| FRAM, Ferroelectric Random Access Memory |
Notes
| 677 |