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Publication Information

Title: Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes

Type: Journal

Info: Journal of Vacuum Science & Technology B 32, 03D123 (2014)

Date: 2014-04-15

DOI: http://dx.doi.org/10.1116/1.4873323

Author Information

Name

Institution

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

North Carolina State University

North Carolina State University

North Carolina State University

North Carolina State University

North Carolina State University

North Carolina State University

Films

Deposition Temperature = 200C

19962-11-9

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent 4294A

Hysteresis

Sawyer-Tower circuit

Custom

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

JEOL 2010F

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Rigaku

Substrates

Si(100)

Keywords

FRAM, Ferroelectric Random Access Memory

Notes

677


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