Title: Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
Type: Journal
Info: Journal of Vacuum Science & Technology B 32, 03D123 (2014)
Date: 2014-04-15
DOI: http://dx.doi.org/10.1116/1.4873323
Name
Institution
University of Florida
University of Florida
University of Florida
University of Florida
University of Florida
North Carolina State University
North Carolina State University
North Carolina State University
North Carolina State University
North Carolina State University
North Carolina State University
19962-11-9
Characteristic
Analysis
Diagnostic
Thickness
Ellipsometry
Unknown
Dielectric Constant, Permittivity
C-V, Capacitance-Voltage Measurements
Agilent 4294A
Hysteresis
Sawyer-Tower circuit
Custom
Leakage Current
I-V, Current-Voltage Measurements
Keithley 4200-SCS
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
TEM, Transmission Electron Microscope
JEOL 2010F
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
GIXRD, Grazing Incidence X-Ray Diffraction
Rigaku
Si(100)
FRAM, Ferroelectric Random Access Memory
677
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