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Publication Information

Title: Annealing behavior of ferroelectric Si-doped HfO2 thin films

Type: Journal

Info: Thin Solid Films 615 (2016) 139 - 144

Date: 2016-07-05

DOI: http://dx.doi.org/10.1016/j.tsf.2016.07.009

Author Information

Name

Institution

University of Florida

University of Florida

University of Florida

University of Florida

Films

Deposition Temperature = 200C

3275-24-9

7727-37-9

Deposition Temperature = 200C

19962-11-9

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Hysteresis

Unknown

Unknown

Polarization

Unknown

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent 4294A

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Breakdown Voltage

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

Si(100)

TiN

Keywords

Ferroelectrics

Doping

Notes

841


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