Annealing behavior of ferroelectric Si-doped HfO2 thin films

Type:
Journal
Info:
Thin Solid Films 615 (2016) 139 - 144
Date:
2016-07-05

Author Information

Name Institution
Patrick D. LomenzoUniversity of Florida
Qanit TakmeelUniversity of Florida
Saeed MoghaddamUniversity of Florida
Toshikazu NishidaUniversity of Florida

Films



Film/Plasma Properties

Characteristic: Hysteresis
Analysis: -

Characteristic: Polarization
Analysis: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)
TiN

Keywords

Ferroelectrics
Doping

Notes

841