Publication Information

Title:
Optical properties and bandgap evolution of ALD HfSiOx films
Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:32
Date:
2014-12-30

Author Information

Name Institution
Wen YangFudan University
Michael FronkTechnische Universität Chemnitz
Yang GengFudan University
Lin ChenFudan University
Qing-Qing SunFudan University
Ovidiu D. GordanTechnische Universität Chemnitz
Peng ZhouFudan University
Dietrich R. T. ZahnTechnische Universität Chemnitz
David Wei ZhangFudan University

Films


Plasma SiO2



Film/Plasma Properties

Characteristic: Optical Properties
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Optical Bandgap
Analysis: Ellipsometry

Substrates

Si(100)

Keywords

High-k Dielectric Thin Films
Optical

Notes

Wafers RCA + HF + DI + N2 predeposition.
Beneq TFS-200 PEALD HfO2 and HfSiOx optical and bandgap properties study.
296