TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
Type:
Journal
Info:
Journal of Applied Physics 117, 134105 (2015)
Date:
2015-03-22
Author Information
| Name | Institution |
|---|---|
| Patrick D. Lomenzo | University of Florida |
| Qanit Takmeel | University of Florida |
| Chuanzhen Zhou | North Carolina State University |
| Chris M. Fancher | North Carolina State University |
| Eric Lambers | University of Florida |
| Nicholas G. Rudawski | University of Florida |
| Jacob L. Jones | North Carolina State University |
| Saeed Moghaddam | University of Florida |
| Toshikazu Nishida | University of Florida |
Films
Plasma HfSiOx
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Hysteresis
Analysis: P-V, Polarization-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Pulsed Transient Current Measurement
Analysis: I-V, Current-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Substrates
| TaN |
Notes
| Ultratech/Cambridge NanoTech Fiji PEALD Si:HfO2 for ferroelectric study. |
| 345 |