Publication Information

Title:
TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
Type:
Journal
Info:
Journal of Applied Physics 117, 134105 (2015)
Date:
2015-03-22

Author Information

Name Institution
Patrick D. LomenzoUniversity of Florida
Qanit TakmeelUniversity of Florida
Chuanzhen ZhouNorth Carolina State University
Chris M. FancherNorth Carolina State University
Eric LambersUniversity of Florida
Nicholas G. RudawskiUniversity of Florida
Jacob L. JonesNorth Carolina State University
Saeed MoghaddamUniversity of Florida
Toshikazu NishidaUniversity of Florida

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Hysteresis
Analysis: P-V, Polarization-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Pulsed Transient Current Measurement
Analysis: I-V, Current-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Substrates

TaN

Keywords

Ferroelectrics

Notes

Ultratech/Cambridge NanoTech Fiji PEALD Si:HfO2 for ferroelectric study.
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