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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
Type:
Journal
Info:
Solid-State Electronics, Volume 99, September 2014, Pages 25-30
Date:
2014-04-23
Author Information
| Name | Institution |
|---|---|
| Albert Colón | University of Illinois at Chicago |
Films
Plasma HfO2
Hardware used: Oxford Instruments FlexAL
Plasma Al2O3
Hardware used: Oxford Instruments FlexAL
Plasma HfAlOx
Hardware used: Oxford Instruments FlexAL
Plasma HfSiOx
Hardware used: Oxford Instruments FlexAL
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: -
Substrates
Notes
| Oxford Instruments FlexAL PEALD Al, Hf, and Si oxides for MISHFET dielectrics. |
| 257 |