High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors

Type:
Journal
Info:
Solid-State Electronics, Volume 99, September 2014, Pages 25-30
Date:
2014-04-23

Author Information

Name Institution
Albert ColónUniversity of Illinois at Chicago

Films

Plasma HfO2


Plasma Al2O3


Plasma HfAlOx


Plasma HfSiOx


Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: -

Substrates

Notes

Oxford Instruments FlexAL PEALD Al, Hf, and Si oxides for MISHFET dielectrics.
257