Publication Information

Title:
High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
Type:
Journal
Info:
Solid-State Electronics, Volume 99, September 2014, Pages 25-30
Date:
2014-04-23

Author Information

Name Institution
Albert ColónUniversity of Illinois at Chicago

Films

Plasma HfO2


Plasma Al2O3


Plasma HfAlOx


Plasma HfSiOx


Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: -

Substrates

Keywords

High-k Dielectric Thin Films
Gate Dielectric
MISHFET

Notes

Oxford Instruments FlexAL PEALD Al, Hf, and Si oxides for MISHFET dielectrics.
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