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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
Type:
Journal
Info:
Solid-State Electronics, Volume 99, September 2014, Pages 25-30
Date:
2014-04-23
Author Information
| Name | Institution |
|---|---|
| Albert Colón | University of Illinois at Chicago |
Films
Plasma HfO2
Hardware used: Oxford Instruments FlexAL
Plasma Al2O3
Hardware used: Oxford Instruments FlexAL
Plasma HfAlOx
Hardware used: Oxford Instruments FlexAL
Plasma HfSiOx
Hardware used: Oxford Instruments FlexAL
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: -
Substrates
Keywords
| High-k Dielectric Thin Films |
| Gate Dielectric |
| MISHFET |
Notes
| Oxford Instruments FlexAL PEALD Al, Hf, and Si oxides for MISHFET dielectrics. |
| 257 |