Title: High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
Type: Journal
Info: Solid-State Electronics, Volume 99, September 2014, Pages 25-30
Date: 2014-04-23
DOI: http://dx.doi.org/10.1016/j.sse.2014.05.005
Name
Institution
University of Illinois at Chicago
Characteristic
Analysis
Diagnostic
Interface Trap Density
-
-
High-k Dielectric Thin Films
Gate Dielectric
MISHFET
Oxford Instruments FlexAL PEALD Al, Hf, and Si oxides for MISHFET dielectrics.
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