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High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors

Type:
Journal
Info:
Solid-State Electronics, Volume 99, September 2014, Pages 25-30
Date:
2014-04-23
DOI:
http://dx.doi.org/10.1016/j.sse.2014.05.005

Author Information

Name Institution
Albert ColónUniversity of Illinois at Chicago

Films

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
Deposition Temperature Range N/A

Plasma HfAlOx

Hardware used: Oxford Instruments FlexAL
Deposition Temperature Range N/A

Plasma HfSiOx

Hardware used: Oxford Instruments FlexAL
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: -
Diagnostic: -

Substrates

Notes

Oxford Instruments FlexAL PEALD Al, Hf, and Si oxides for MISHFET dielectrics.
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