The publication database currently has 1655 entries.
Use Advanced Search for more complex searches
Recent Database Additions
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
Type:
Journal
Info:
Solid-State Electronics, Volume 99, September 2014, Pages 25-30
Date:
2014-04-23
Author Information
| Name | Institution |
|---|---|
| Albert Colón | University of Illinois at Chicago |
Films
Plasma HfO2
Hardware used: Oxford Instruments FlexAL
Plasma Al2O3
Hardware used: Oxford Instruments FlexAL
Plasma HfAlOx
Hardware used: Oxford Instruments FlexAL
Plasma HfSiOx
Hardware used: Oxford Instruments FlexAL
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: -
Substrates
Keywords
| High-k Dielectric Thin Films |
| Gate Dielectric |
| MISHFET |
Notes
| Oxford Instruments FlexAL PEALD Al, Hf, and Si oxides for MISHFET dielectrics. |
| 257 |