Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing

Type:
Conference Proceedings
Info:
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference
Date:
2007-11-06

Author Information

Name Institution
Fourmun LeeASM America Inc.
Steven MarcusASM America Inc.
Eric SheroASM America Inc.
Glen WilkASM America Inc.
Johan SwertsASM America Inc.
Jan Willem MaesASM America Inc.
Tom BlombergASM America Inc.
Annelies DelabieIMEC
Mickaƫl Gros-JeanSTMicroelectronics
Emilie DeloffreSTMicroelectronics

Films

Thermal HfO2


Thermal HfSiOx


Plasma Ta2O5

Hardware used: ASM EmerALD

CAS#: 7782-44-7

Thermal Al2O3


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Density
Analysis: -

Characteristic: Porosity
Analysis: -

Characteristic: Thickness
Analysis: -

Characteristic: Chemical Composition, Impurities
Analysis: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -

Substrates

Notes

1610