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Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (12) G299-G303 (2008)
Date:
2008-09-03
Author Information
| Name | Institution |
|---|---|
| Hyungchul Kim | Hanyang University |
| Seokhoon Kim | Hanyang University |
| Sanghyun Woo | Hanyang University |
| Hye Yeong Chung | Hanyang University |
| Honggyu Kim | Hanyang University |
| Jongsan Park | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma HfSiOx
Plasma HfSiON
Hardware used: Custom Remote Inductively Coupled Plasma
CAS#: 352535-01-4
CAS#: 7782-44-7
CAS#: 7727-37-9
Other HfSiON
Hardware used: Custom Remote Inductively Coupled Plasma
CAS#: 352535-01-4
CAS#: 7782-44-7
CAS#: 10024-97-2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1331 |