Publication Information

Title: Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments

Type: Journal

Info: Journal of The Electrochemical Society, 155 (12) G299-G303 (2008)

Date: 2008-09-03

DOI: http://dx.doi.org/10.1149/1.2990702

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma HfSiOx using Custom ICP

Deposition Temperature = 300C

352535-01-4

15112-89-7

7782-44-7

Plasma HfSiON using Custom ICP

Deposition Temperature = 300C

352535-01-4

15112-89-7

7782-44-7

7727-37-9

Other HfSiON using Custom ICP

Deposition Temperature = 300C

352535-01-4

15112-89-7

7782-44-7

10024-97-2

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Substrates

Si(100)

Keywords

Notes

1331



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