Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments

Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (12) G299-G303 (2008)
Date:
2008-09-03

Author Information

Name Institution
Hyungchul KimHanyang University
Seokhoon KimHanyang University
Sanghyun WooHanyang University
Hye Yeong ChungHanyang University
Honggyu KimHanyang University
Jongsan ParkHanyang University
Hyeongtag JeonHanyang University

Films




Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

1331