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Nitrous Oxide, N2O, CAS# 10024-97-2

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 14 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
2Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
3Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
4The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
5Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
6Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
7The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
8Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
9Fast Flexible Plastic Substrate ZnO Circuits
10Fast PEALD ZnO Thin-Film Transistor Circuits
11Low-Power Double-Gate ZnO TFT Active Rectifier
12Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
13Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
14The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films

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