Low-Power Double-Gate ZnO TFT Active Rectifier

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 4, PP. 426-428, 2016
Date:
2016-03-09
DOI:
http://dx.doi.org/10.1109/LED.2016.2527832

Author Information

Name Institution
Kaige SunThe Pennsylvania State University
Kyusun ChoiThe Pennsylvania State University
Thomas N. JacksonThe Pennsylvania State University

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
CO2, Carbon Dioxide
CAS#: 124-38-9
Where to buy precursor
Deposition Temperature = 200C

Plasma ZnO

Hardware used: Custom
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
N2O, Nitrous Oxide
CAS#: 10024-97-2
Where to buy precursor
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Notes

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