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An economical, compact inductively coupled plasma source.

Ideal for:

  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Low-Power Double-Gate ZnO TFT Active Rectifier

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 4, PP. 426-428, 2016
Date:
2016-03-09

Author Information

Name Institution
Kaige SunThe Pennsylvania State University
Kyusun ChoiThe Pennsylvania State University
Thomas N. JacksonThe Pennsylvania State University

Films


Plasma ZnO


Film/Plasma Properties

Substrates

Notes

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